Max Noack

Position : Associate Scientist at MRC
Office: 243 ASC I
Phone: (515) 294-8698 / 294-5106
E-mail: noackmax@iastate.edu

Max Noack is responsible for upgrades to PECVD system and for characterization of a-Si and nanocrystalline Si materials and devices (solar cells and thin film transistors). This also includes operation of a Deep Reactive Ion Etch system and a Plasma Reactive Ion Etch system. Diagnostics on systems used for contacting device such as sputter system and thermal evaporator. Also, Max is improving and development of electrical and optical characterization systems for a-Si materials and devices. These systems are spectro-photometer, quantum efficiency, light soaking, photo-conductivity tester, activation energy, multi-frequency capacitance spectroscopy, carrier lifetime measurements, space charge limited current, and I-V tester.

Mr. Noack's areas of research are on plasma deposition of a-Si and nanocrystalline Si, PECVD growth of oxides and nitrides used with thin film transistors, and on property measurements of a-Si and nanocrystalline Si materials.

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