Position : Director of MRC and Thomas Whitney Professor in Electrical and
Computer Engineering
Office: 235 ASC I
Phone: (515) 294-7732
E-mail: vdalal@iastate.edu
Dr. Dalal received both a Ph.D. in Electrical Engineering and an MPA in Economics from Princeton University. Prior to
joining the MRC staff, he was a Research Scientist at RCA Laboratories; Consultant and
Research Associate for the Ford Foundation and Princeton University; Manager of the Institute of Energy Device Group at the
University of Delaware; Vice President of R&D for the Chronar Corporation;
and Technical Manager for the Spire Corporation and the Polaroid Corporation. His research interests
include photovoltaic energy conversion, growth and characterization of new electronic
materials and devices, novel processing techniques, plasma beam epitaxy, low temperature
processing, thin film heteroepitaxy, hightemperature electronic materials and devices,
and new devices for imaging, printing, sensors, and energy conversion. Dr. Dalal has
authored more than 120 publications and currently holds 11 U.S. patents.
Photovoltaic Materials and Device Research Group
Selected Publications
M. Boshta, B. Alavi, R. Braunstein, K. Bärner and V.L. Dalal, “Electronic transport properties of the μc-(Si,Ge) alloys prepared by ECR deposition”, Solar Energy Mater. and Solar cells, 87, 387(2005)
Vikram Dalal, Puneet Sharma “ Diffusion length and defect densities in nanocrystalline Si solar cells” Appl. Phys. Lett. 86, 103510 (2005)
Nanlin Wang and Vikram Dalal, “Nanocrystalline Si Films and Devices Produced Using Chemical Annealing with He”, accepted for publication in Proc. Of MRS (2005)
Xuejun Niu, Jeremy Booher and Vikram L. Dalal, “Nanocrystalline Germanium and Germanium Carbide Films and Devices”, Accepted for publication, Proc. Of MRS (2005)
Vikram L. Dalal, Kamal Muthukrishnan, Daniel Stieler and Max Noack, “Growth chemistry of nanocrystalline Si:H films”, accepted for publication , Proc. Of MRS (2005)
U.S. Patents
PAT.
NO.
Title
4,692,558
Counteraction
of semiconductor impurity effects
4,604,636
Microcrystalline semiconductor method and devices
4,485,128
Bandgap control in amorphous semiconductors
4,478,654
Amorphous silicon carbide method
4,477,688
Photovoltaic cells employing zinc phosphide
4,465,706
Bandgap control in amorphous semiconductors
4,387,265
Tandem junction amorphous semiconductor photovoltaic cell
4,377,723
High efficiency thin-film multiple-gap photovoltaic device
4,253,882
Multiple gap photovoltaic device
4,251,287
Amorphous semiconductor solar cell
3,988,167 Solar cell device having improved efficiency
Links
Revised: 11/19/09