Vikram
Dalal, Publications List (May 2005)
Publications in Archival Journals
1. M. Boshta, B. Alavi, R. Braunstein, K. Bärner and V.L. Dalal, “Electronic transport properties of the μc-(Si,Ge) alloys prepared by ECR deposition”, Solar Energy Mater. and Solar cells, 87, 387(2005)
2. Vikram Dalal, Puneet Sharma “ Diffusion length and defect densities in nanocrystalline Si solar cells” Appl. Phys. Lett. 86, 103510 (2005)
3. Vikram L. Dalal, J. Graves and J. Leib, “ Influence of pressure and ion bombardment on the growth and properties of nanocrystalline Si materials”, Appl. Phys. Lett., 85, 1413(2004)
4. M. Boshta, K. Barner, R. Braunstein, B. Alavi and V. L. Dalal, “Determination of trap density differences in microcrsytalline (Si,Ge):H alloys”, Materials Science and Engineering B: Solid-State Materials for Advanced Technology, v 112, 69-72 (2004)
5. M. A. Ring, V. L. Dalal and K. Muthukrishnan, “Properties of a-Si and a-(Si,Ge) films grown using combined ECR-hot wire processes”, J. Non-cryst. Solids 338-340, 61 (2004)
6. Jianhua Zhu ,V. L. Dalal,J.D. Cohen, M. Ring “ Properties of a-Ge:H films and devices”, J. Non-Cryst. Solids, 338-340 651(2004)
7. Vikram L. Dalal, Matt Welsh, Max Noack and J. H. Zhu, “Microcrystalline Si:H Cells Grown Using ECR Plasma Process”, (Invited paper), IEE Proc.-Circuits, Devices and Syst. 150, 316(2003)
8. Vikram L. Dalal, “Fundamental Considerations governing the growth of a-Si and a-(Si,Ge)”(Invited paper), Current Opinions in Solid State Materials, 6, 455 (2002)
9. Vikram L. Dalal, Paul Seberger, Matt Ring and Puneet Sharma, “ Growth of a-Si films using combined hot wire-ECR process”, Thin Solid Films 430, 91(2003)
10. Vikram L. Dalal, Yong Liu , Zhiyang Zhou and Keqin Han, “Growth and Properties of Low Bandgap amorphous (Si,Ge) Alloy Materials and Devices”, J. Non-Cryst. Solids, 299-302, 1127( 2002)
11. S. R. Sheng, M. Boshta, R. Braunstein and V. L. Dalal, “ On the transport properties of a-(Si,Ge) alloys”, J. Non-Cryst. Solids , 303, 202 (2002)
12. V. L. Dalal, “Fundamental considerations of growth
chemistry of a-Si and alloys” Thin Solid Films 395, 173(2001)
13. K. Erickson and V. L. Dalal, “ Growth of microcrystalline Si and (Si,Ge) films on plastic substrates”, J.Non-Cryst. Solids, 266, 685(2000)
14. V. L. Dalal, S. Haroon, Zhiyang Zhou, T. Maxson and K, Han, “Influence of plasma chemistry on the properties of a-Si,Ge:H alloys”, J.Non-Cryst. Solids, 266,675(2000)
15. J. Herrold and V. L. Dalal, “ Growth and properties of microcrystalline (Ge,C)”, J.Non-Cryst. Solids., 270, 255(2000)
16. J. Shinar, R. Shinar, D. Williamson, S. Mitra and V. Dalal , “Microstructure and hydrogen dynamics in hydrogenated amorphous (Si,C)” Phys. Review B.60, 15875(1999)
17. V. L. Dalal, T. Maxson and Kay Han, “ Significant improvements in stability of a-Si:H single and tandem junction solar cells made using ECR plasma deposition”, J. Non-Cryst. Solids,227,1257(1998)
18. T. W. F. Russell, V. L. Dalal, R. Gay and S. Guha, “Design of critical experiments for scale-up”, Prog. In Photovoltaics, 5, 353(1997)
19. V. L. Dalal, S. Kaushal and R. Girvan,, “Improvements in stability of a-Si:H solar cells”, J. Non-crystalline Solids, 198-200, 1101(1996)
20. S. Kaushal, V. L. Dalal and J. Xu, “Growth of high quality a-(Si,Ge):H films using low pressure remote ECR discharge, J. Non-Cryst. Solids, 198-200, 563(1996)
21. S. DeBoer, V. L. Dalal, R. Bartel and G. Chumanov, “ Low temperature epitaxial growth of Si films using high vacuum ECR plasma deposition”, Appl. Phys. Lett., 66 , 2528(1995)
22. V. L. Dalal, E. X. Ping, S. Kaushal, M. Bhan, and M.Leonard, “ Growth of a-Si:H films with significantly improved stability”, Appl. Phys. Lett., 64 , 1862(1994)
23. B. Moradi, V. L. Dalal and R. Knox, “ Properties of poly-Si films deposited on amorphous substrates using reactive plasma beam deposition technique”, J. Vac. Sci. Tech. A12, 251(1994)
24. V. L. Dalal, R. Knox and B. Moradi, “Measurement of Urbach edge and midgap states in a-Si p-i-n devices”,Solar Energy Materials and Solar Cells, 31, 346(1993)
25. E. X. Ping and V. L. Dalal, “ Exciton photoluminescence of quantum wells affected by thermal migration and inherent interface fluctuation”, J. Appl. Phys., 74, 5349(1993)
26. E. X. Ping and V. L. Dalal, “Resonant tunneling of plane, cylindrical and spherical double barrier quantum wells”, J. Appl. Phys., 73, 5289(1993)
27. R. Knox, V. L. Dalal, B. Moradi and G. Chumanov, “ Amorphous and polycrystalline Si films deposited by reactive ECR plasma deposition”, J.Vac.Sci.Tech. A11, 1896(1993)
28. V. L. Dalal, M. Leonard and G. Baldwin, “ Fabrication of a-Si materials and devices at high temperatures using ECR deposition “, J. Non-Cryst. Solids, 164-166, 71(1993)
29. E. X. Ping and V. L. Dalal, “ Electron-hole quantum confined states affected by point charge in semiconductor crystallites”, Solid State Comm., 82, 749(1992)
30. R. Knox, V. L. Dalal and O. Popov, “ Characterization of electronic and optical properties of a-Si:H films grown using ECR plasma”, J. Vac. Sci. Tech. A9 , 474(1991)
31. M. Akhtar, V. L. Dalal, J. Cambridge, K. Ramaprasad and S. C. Gau, “ Electronic and optical properties of CVD a-Si films”, Appl. Phys. Lett., 41, 1146(1982)
32. T. W. F. Russell and V. L. Dalal, “ The potential for thin film photovoltaic cells”, IEEE Trans. on Education, E-24, 239(1981)
33. V. L. Dalal and F. Alvarez, “ Transport properties of minority carriers in a-Si:H n-I-p junctions”, J. de Phys., 42, C-$, 491(1981)
34. V. L. Dalal, “ Design considerations for a-Si solar cells”, IEEE Trans. Electron Devices, ED-27, 662(1980)
35. V. L. Dalal, “Analysis of a-Si solar cells”, Solar Cells, 2 , 261(1980)
36. P. H. Nielsen and V. L. Dalal, “ thermoelectric power and conductivity of a-Si:F:H films”, Appl. Phys. Lett.,37, 1090(1980)
37. V. L. Dalal and A. Rothwarf, “ A comment on simple measurement of solar cell efficiency”, J. Appl. Phys., 49 , 2980(1979)
38. V. L. Dalal and A. Moore, “ Design considerations for high intensity solar cells”, J. Appl. Phys., 48, 1244(1977)
39. V. L. Dalal, H. Kressel and P. Robinson, “ Epitaxial Si solar cell”, J. Appl. Phys., 46, 1283(1975)
40. H. Kressel, P. Robinson, R. D’Aiello, R. McFarlane and V. L. Dalal, “Epitaxial Si junctions on Si ribbon substrates”, Appl. Phys. Lett., 25, 197(1974)
41. H. Kressel, P. Robinson, S. McFarlane, R. D’Aiello and V. L. Dalal ,” Characterization of Properties of p-n junctions deposited on Si ribbon substrates”, J.Electron. Mater. 3,855(1974)
42. V. L. Dalal, H. Kressel and W. Hicinbothem, “ Carrier lifetimes in epitaxial InAs”, Appl. Phys. Lett., 24, 184(1974)
43. V. L. Dalal, “Energy, environment and need for new technology”, J. Energy Conversion,(1973)
44. V. L. Dalal and M. A. Lampert, “ Transient space charge phenomena in semiconductors at high electric fields”, Solid-State Electron.,16 ,689(1973)
45. V. L. Dalal, A. B. Dreeben and A. Triano, “ Reply to comments on hole velocity in GaAs”, J. Appl. Phys.,43, (1972)
46. V. L. Dalal and M. A. Lampert, “ High electric field effects in n-Si”, J. Appl. Phys., 43, 4600(1972)
47. V. L. Dalal, “ A possible field assisted photocathode”, J. Appl. Phys., 42, 2280(1972)
48. V. L. Dalal, “ A simple model for internal photoemission”, J. Appl. Phys., 42,2274(1971)
49. V. L. Dalal, “Analysis of photoemissive Schottky barrier photodetector”, J. Appl. Phys., 42 ,2280(1971)
50. V. L. Dalal “ Hole velocity in p-GaAs”, Appl. Phys. Lett., 16, 489(1970)
51. V. L. Dalal, A. B. Dreeben and A. Triano, “ Temperature dependence of hole velocity in GaAs”, J. Appl. Phys., 42 , 2864(1971)
52. V. L. Dalal, “ Avalanche multiplication in bulk n-Si”, Appl. Phys. Lett., 15, 379(1969)
Under preparation:
1. Vikram L. Dalal, “ Device Physics of nanocrystalline Si:H solar cells”
2. Vikram L. Dalal and Jeremy Booher, “ Kinetics of trap-controlled degradation in a-Si:H”
3. Vikram L. Dalal and Jianhua Zhu, “a-Ge:H solar cell”
4. Marsela Pontoh and Vikram L. Dalal, “ Identification of growth radicals in ECR plasma deposition of a-Si:H”
5. Vikram Dalal, Dan Stiler, Kamal Muthukrishnan, Max Noack and Eric Schares, “Electron mobility in nanocrystalline Si”
1. Nanlin Wang and Vikram Dalal, “Nanocrystalline Si Films and Devices Produced Using Chemical Annealing with He”, accepted for publication in Proc. Of MRS (2005)
2. Xuejun Niu, Jeremy Booher and Vikram L. Dalal, “Nanocrystalline Germanium and Germanium Carbide Films and Devices”, Accepted for publication, Proc. Of MRS (2005)
3. Vikram L. Dalal, Kamal Muthukrishnan, Daniel Stieler and Max Noack, “Growth chemistry of nanocrystalline Si:H films”, accepted for publication , Proc. Of MRS (2005)
4. Vikram L. Dalal, “Material and Device physics of Nanocrystalline Si”, Proc. Of 21st. IEEE Photovolt. Spec. Conf.(2004) to be published
5. Xuejun Niu and Vikram Dalal, “Growth of nanocrystalline Ge films with large grain sizes”, Proc. Of IEEE Photovolt. Spec. Conf.(2004), to be published
6. Vikram Dalal, David Staab, Puneet Sharma, Max Noack and Keqin Han “Defect densities, diffusionlengths and device Physics of nanocrystalline Si:H solar cells”, Proc. Of MRS,808,569 (2004)
7. Jarrod McDonald and Vikram Dalal, “Investigation of oxides and nitrides for nanocrystalline Si:H TFT devices”, Proc.of MRS, 808, 721 (2004).
8. V. L. Dalal and Xuejun Niu, “ Photovoltaic properties of Ge,C alloys”, Proc. Of MRS 762,619(2003)
9. Jianhua Zhu and V. L. Dalal . “ Microcrystalline Si,Ge solar cells” , Proc. Of MRS 762, 375 (2003)
10.
V. L. Dalal, P. Sharma and A. Ahmed, “Evidence for trap
controlled instability in a-Si”, Proc. Of MRS 762,33(2003)
11. M. Pontoh, Vikram Dalal and Neha Gandhi, “Characterization of ECR plasma”, Proc. Of Mater. Res. Soc. (2002) Vol. 715
12. Yong. Liu and Vikram Dalal, “ Properties of a-(Si,Ge) films and devices deposited at higher growth rates” Proc. Of Mater. Res. Soc. (2002) Vol. 715
13. Roger Keen and Vikram Dalal, “ Growth and properties of fluorinated silicon dioxide using ECR plasma deposition”, Proc. Of MRS (2002) Vol. 715
14. Vikram Dalal and Yong Liu, “ Properties of low gap a-Si,Ge materials and devices”, Proc. Of. IEEE Photovolt. Conf.(2002)
15. V. L. Dalal, “Some considerations relating to growth chemistry of a-Si and a-(Si,Ge) alloys”, Proc. Of MRS, 664, A5.3 (2001)
16. M. deFreese, V. L. Dalal and J. Falter, “Optical emission spectroscopy of germane plasmas produced in an ECR reactor”, Proc. Of MRS, Vol. 664, A5.2 (2001)
17. S. R. Sheng, R. Braunstein and V. L. Dalal, “Electronic and optical properties of high quality, low bandgap a-(Si,Ge) alloys”, Proc. Of MRS, Vol. 664, A8.4 (2001)
18. V. L. Dalal and Jason Herrold, “ Microcrystalline Germanium Carbide: A new, almost direct gap, thin film material for photovoltaic energy conversion”, Proc. Of MRS, Vol. 664, A25.12 (2001)
19. V. L. Dalal, Z. Zhou, T. Maxson and K. Han, “ Low bandgap a-(Si,Ge) solar cells”, Proc. Of MRS , Vol. 609 (2000)
20. V. L. Dalal and K. Erickson “ Microcrystalline Si solar cells”, Proc. Of MRS, Vol. 609(2000)
21. V. L. Dalal and K. Erickson, “ Microcrystalline Si and (Si,Ge) solar cells on plastic substrates”, Proc. Of 28th. IEEE Photovolt. Spec. Conf.(2000) ,p.792-795
22. R. Estwick and V. L. Dalal, “Quantum efficiency in a-Si cells”, Proc. of MRS, 507, 37 (1999)
23. J. Herrold and V. L. Dalal, “Growth and properties of (Ge,C)”, Proc. of MRS 507, 561(1999)
24. R. Shinar, J. Shinar, D. Williamson, S. Mitra, H. Kavak and V. L. Dalal, “Microstructure and hydrogen dynamics in a-(Si,C):H”, Proc. Of MRS, 507, 329(1999)
25. V. L. Dalal, T. Maxson and S. Haroon, “ Influence of plasma chemistry on properties of a-(Si,Ge) devices”, Proc. MRS, 507, 441(1998)
26. K. Erickson and V. L. Dalal, “Preparation and properties of microcrystalline (Si,Ge) on plastic substrates” , Proc. of MRS, 507, 987(1998)
27. V. L. Dalal, S. Haroon and T. Maxson, “ Influence of plasma chemistry on the properties of a-(Si,Ge) solar cells” , Proc. of 2nd. World Conference on Photovoltaic Solar Energy Conversion, p.865(1998)
28. V. L. Dalal, T. Maxson, and K. Han “Properties of a-Si and a-(Si,Ge):H solar cells prepared using ECR deposition”, Proc. of 26th. IEEE Photovolt. Spec. Conf, p. 695(1997)
29. V. L. Dalal, T. Maxson, R. Girvan and S. Haroon, “ Stability of single and tandem junction a-Si solar cells prepared using ECR deposition”, Proc. of Matl. Res. Soc., 467 , 813(1997)
30. K. Erickson and V. L. Dalal, “Growth of microcrystalline Si:H and (Si,Ge):H films on polyimide substrates using ECR deposition techniques”, Proc. of Mater. res. Soc., 467, 409(1997)
31. V. L. Dalal, S. Kaushal, T. Maxson, R. Girvan and A. Boerner, “Stability properties of a-Si and a-(Si,Ge):H films and devices deposited using remote ECR techniques”, Proc. of Amer. Inst. of Phys.,Vol. 394, (Ed. Ed Witt et al), p. 33(1997).
32. V. L. Dalal, S. Kaushal, R. Girvan, S. Hariasra and L. Sipahi, “ Improved stability in a-Si solar cells”, Proc. of 25th. IEEE Photovolt. Spec. Conf.,p. 1069(1996)
33. V. L. Dalal, S. Kaushal, L. Sipahi, S. Hariasra and R. Girvan, “ Properties of substrate type a-Si devices prepared using ECR deposition”, Proc. of Mater.res. Soc., Vol. 420 , 39(1996)
34. V. L. Dalal and S. Kaushal, E. X. Ping, J. Xu, R. Knox and K. Han, “Microcrystalline and mixed-phase Si:H: Preparation, properties and potential for devices”, Proc. of Mater. Res. Soc. 377, 137(1995)
35. S. Deboer and V. L. Dalal, “Preparation and properties of high quality Si films grown using ECR plasma beam deposition”, Proc. of 24th. IEEE Photovolt. Spec. Conf.,p.1258(1994)V. L. Dalal, S. Kaushal, J. Xu and K. Han, “ Critical review of growth and properties of a-(Si,Ge):H”, Proc. of 24th. IEEE Photovolt. Spec. Conf., p. 464(1994)
36. R. Shinar, J. Shinar, V. L. Dalal, “ Hydrogen diffusion in B doped and undoped a-(Si,C):H”, Proc. of Mater. res. Soc.,336,317(1994)
37. W. Luft, H. M. Branz, V. L. Dalal, S. Hegedus and E. Schiff “Progress in a-Si PV technology”, Proc. of Amer. Inst. of Physics, Vol. 353 , 81(1995)
38. V. L. Dalal, G. Baldwin, E. X. Ping, M. Leonard and M. Bhan, “ Fabrication of more stable materials and devices in a-Si:H”, Proc. of Amer. Inst. of Phys.,Vol. 306 ,460(1993)
39. W. Luft, H. Branz, V. L. dalal, S. Hegedus and E. Schiff, “ Progress in a-Si technology”, Proc. of Amer. Inst. of Phys.,306, 31(1993)
40. V. L. Dalal, G. Baldwin and A. Garikepati, “ Improvements in stability of a-Si solar cells through the use of bandgap grading”, Proc. of 23rd. IEEE Photovolt. Spec. Conf., 816(1993)
41. V. L. Dalal and G. Baldwin, “ Deposition of high quality a-(Si,Ge):H films and devices”, proc. of 23rd. IEEE Photovolt. Spec. Conf., 1037(1993)
42. V. L. Dalal and G. Baldwin, “ Design and fabrication of graded bandgap soalr cells in a-Si and alloys”, Proc. of Mater. Res. Soc., 297, 833(1993)
43. V. L. Dalal, R. Knox, N. Kandalaft, K. Han and B. Moradi, “ Properties of a-Si films and devices deposited using reactive plasma beam technique”, Proc. of Amer. Inst. of physics, 268, 388(1992)
44. V. L. Dalal, S. Chopra and R. Knox, “ Role of charged defects in photo-degradation of a-Si”, Proc. of Matl. Res. Soc., 258, 449(1992)
45. V. L. Dalal, “ Novel deposition techniques and device design for stable a-Si solar cells”, Proc. of 6th. Int’l. Conf. on Photovlt. Science and Tech., 1115(1992)
46. V. L. Dalal, R. Knox, B. Moradi, A. Beckel and S. Van Zante, “ Preparation and properties of a-Si films prepared using ECR plasma”, Proc. of Amer. Inst. of Phys., 234 , 234(1991)
47. V. L. Dalal, B. Moradi and G. Baldwin, “ Design considerations for stable a-Si based solar cells”, Proc. of Amer. Inst. of Phys., 234, 298(1991)
48. R. Knox, V. L. Dalal and B. Moradi, “ Investigation of influence of plasma properties on the electronic and optical properties of a-Si:H films grown by ECR plasma”, Proc. of Mat’l res. Soc., 219, 781(1991)
49. V. L. Dalal, R. Knox, N. Kandalaft and G. Baldwin, “ Growth and properties of a-Si films grown using pulsed-flow reactive plasma beam process”, Proc. of 22nd. IEEE Photovolt. Spec. Conf., 1399(1991)
50. V. L. Dalal and G. Baldwin, “ Design considerations for stable a-Si and a-(Si,Ge) solar cells”, Proc. Of IEEE PV Conf., 1363(1991)
51. V. L. Dalal, R. Knox and B. Moradi, “ A technique for determining Urbach energy, midgap states and electric field in a-Si and a-(Si,Ge) devices”, Proc. 21st. IEEE Photovolt. Spec. Conf., 1516(1990)
52. B. Stafford, B. Baron, V. L. Dalal and M. Silver, “A-(Si,Ge):H alloys: Status and issues”, Proc. of 21st. IEEE Photovolt. Spec. Conf., 1619(1990)
53. V. L. Dalal and R. Knox,” A new technique for measuring midgap states and hole localization in a-Si:H devices”, Proc. of Mat’l Res. Soc., 192 , 713(1990)
54. V. L. Dalal and C. Fuleihan, “ Stability studies on a-Si:H films”, Proc. of Mat’l Res. Soc., 149, 601(1989)
55. V. L. Dalal, “ Influence of the density of states on device performance in a-Si:H”, Proc. of 19th. IEEE Photovolt. Spec. Conf., 315(1987)
56. V. L. Dalal, “ A comprehensive model for photo-degradation in a-Si:H”, Proc. of Amer. Inst. of Phys., 157, 249(1987)
57. V. L. Dalal, “ Density of states in a-Si:H”, Proc. of SPIE, 706, 79(1986)
58. V. L. Dalal, J. F. Booker and M. Leonard, “ Optical and electronic properties of a-(Si,Ge):H”, Proc. of Mat’l Res. Soc., 49 , 145(1985)
59. V. L. Dalal, J. F. Booker and M. Leonard, “ Photovoltaic properties of a-(Si,Ge):H”, Proc. of 18th. IEEE Photovolt. Spec. Conf., 1500(1985)
60. V. L. Dalal, M. Leonard, J. F. Booker and A. Vaseashta, “Quantum efficiency of a-Si solar cells”, Proc. of 18th. IEEE Photovolt. Spec. Conf., 847(1985)
61. A. Vaseashta, V. L. Dalal, A. Greenwald and W. Halverson, “ Preparation and properties of a-Si grown using a rotary reactor”, Proc. of 18th. IEEE Photovolt. Spec. Conf., 847(1985)
62. V. L. Dalal, “ Realistic design of a-Si multijunction solar cells”, Proc. of 17th. IEEE Photovolt. Spec. Conf., 86(1984)
63. V. L. Dalal, M. Akhtar, A. Delahoy , S. C. Gau and K. Ramaprasad, “ Photovoltaic properties of CVD a-Si:H”, Proc. of 16th. IEEE Photovolt. Spec. Conf.,1384(1982)
64. V. L. Dalal, C. M. Fortmann and E. Eser, “F-etched a-Si films”, Proc. of Amer. Inst. of Phys., 73 , 15(1981)
65. P. Singh, E. Fagen and V. L. Dalal, “ Properties of a-(Si,Ge):H alloy films”, Proc. of 15th. IEEE Photovolt. Spec. Conf., 912(1981)
66. V. L. Dalal and E. Fagen, “ Design principles for monolithic, multiple gap, a-(Si,Ge) solar cells”, Proc. of 14th. IEEE Photovolt. Spec. Conf.,1066(1980)
67. V. L. Dalal, B. N. Baron and T. W. F. Russell, “ Technology considerations for thin film solar cells”, Proc. of AS-Int’l. Solar Energy Soc., 3.2, 981(1980)
68. A. W. Catalano, V. L. Dalal, E. A. Fagen and R. B. Hall, “Zinc Phosphide: A new photovoltaic material”, Proc. of European Conf. on Photovolt., (1978)
69. V. L. Dalal, “ Design and technology of Si cells for concentrator applications”, Proc. of 13th. IEEE Photovolt. Spec. Conf., 1040(1978)
70. A. W. Catalano, V. L. Dalal, E. A Fagen and R. B. Hall, “ Zinc phosphide : a promising photovoltaic material”, Proc. of 13th. IEEE Photovolt. Spec. Conf., 288(1978)
71. V. L. Dalal, “Technology considerations for a-Si solar cells”, Proc. of The Metallurgical and Materials Soc., (1979)
Patents
PAT. NO. Title
4,692,558 Counteraction of semiconductor impurity effects
4,604,636 Microcrystalline semiconductor method and devices
4,485,128 Bandgap control in amorphous semiconductors
4,478,654 Amorphous silicon carbide method
4,477,688 Photovoltaic cells employing zinc phosphide
4,465,706 Bandgap control in amorphous semiconductors
4,387,265 Tandem junction amorphous semiconductor photovoltaic cell
4,377,723 High efficiency thin-film multiple-gap photovoltaic device
4,253,882 Multiple gap photovoltaic device
4,251,287 Amorphous semiconductor solar cell
3,988,167 Solar cell device having improved efficiency
Updated: June 13, 2005