Research Facilities:

The MRC has a sizable equipment base, with capabilities ranging from epitaxial growth to materials characterization to device fabrication. The following is an incomplete list of some MRC facilities.

• Lithography
  • CAD system with multiple data formats
  • Pattern generator
  • Step and repeat system, 1 um resolution
  • Contact mask aligners
  • 3- and 4-inch wafer capability
  • 1,000 ft2 Class 100 clean room
• Diffusion furnaces (3-inch and 4-inch wafer capability)
• Metallization
  • Sputtering systems
  • E­beam evaporation
• Dielectric films
  • Sputtering systems
  • PECVD systems
  • LPCVD
• Reactive ion etching
  • Dual chamber system with F and Cl etching capability
  • Single chamber Deep RIE for Si MEMS etching
• Surface and thin film analysis
  • Secondary ion mass spectrometry
  • Scanning Auger microprobe
  • Scanning electron microscope
  • High resolution electron energy loss spectroscopy
• MBE laboratory
  • 2 Perkin­Elmer MBE systems, Sb and As sources, and ECR plasmasource for nitrogen
  • vacuum evaporator for metal deposition
  • wet processing for the above
• Microwave laboratory
  • Network analyzers to 100 GHz
  • Anechoic chamber for antenna measurements
  • Wire bonder
  • Network analyzer for lower frequencies
  • Phase noise measurement system
• Optical laboratory
  • Photoluminescence
  • Reflectance/transmission measurements for optoelectronic switches
  • FTIR
  • Perkin Elmer Lamda9 uv/vis.NIR spectrophotometer
  • Ocean Optics uv/vis spectrophotometer
• Chemical sensor testing laboratory
  • Gas blending system
  • Network analyzer
• Student fabrication facilities
  • Diffusion furnaces with solid dopant sources for 3­inch wafers
  • Photoresist spinner and bake ovens
  • Mask aligner for low­resolution lithography
  • Karl Sues MJB3 mask aligner with deep UV optics for high­resolution lithography
  • 3 hearth electron beam evaporator
  • HP 4145B semiconductor parameter analyzer
  • HP 4280A C meter / C V plotter
  • Hall coefficient measurement system
  • Nanospec film thickness measurement system
• Device and circuit testing
  • Semiconductor parameter analyzers
  • Probe station with micromanipulators
  • Solar simulator
• Device and circuit packaging
  • Bonders
  • Scribe and break system
• Optical spectroscopy laboratory
  • Coherent Radiation 15­W krypton ion laser
  • Coherent Radiation 8­W argon ion laser
  • Coherent Radiation 5­W argon ion laser
  • Coherent Radiation 3­W argon ion laser
• Plasma Deposition Laboratory
  • 2 ECR plasma CVD reactors for depositing amorphous and microcrystalline Si films and devices
  • 1 VHF (80 MHz)-plasma CVD reactor for depositing microcrystalline Si materials and devices
  • 1 Hot wire reactor for depositing amorphous Si and Ge films and devices
  • In-situ growth characterization systems, including Langmuir probes, in-line quadrapole mass-spectrometer and Optical Emission Spectroscopy
• Electronic Material and Device Characterization Laboratory
  • Multi-frequency, multi-temperature C(V) instruments ( Agilent 4263, HP 4274, HP 4275) for characterizing amorphous and crystalline materials, oxides/insulators and MOS devices
  • High sensitivity, low noise, multi-temperature Hall set up, capable of measuring nanocrystalline materials
  • DLTS system
  • Quantum efficiency vs. voltage spectroscopy for measuring deep defects and diffusion lengths
  • Photo and dark conductivity apparatus
  • Activation energy set up
  • High intensity xenon lamp for lifetime testing of materials and devices
  • High frequency oscilloscopes and probes
  • High resolution, multi-frequency, Renishaw Raman apparatus ( shared with MSE, in Howe Hall)
• Material Characterization Equipment elsewhere on campus that is accessible to MRC faculty, staff and students:x-ray diffraction:  SEM,TEM, EDS, XPS, AFM, Surface profilometer

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Revised: 16 September 2003 by D. Schmidt