Kamal Muthukrishnan
Kamal Muthukrishnan obtained his B.Tech degree from the Central Electrochemical Research Institute (CECRI) in India in 2001. He also obtained his M.S. degree in Chemical Engineering from Iowa State in 2003. He is currently working towards his Ph.D. degree in EE with Professor Dalal. Kamal’s research focuses on understanding and controlling the growth and properties of nanocrystalline Si:H films and devices grown using a remote hot wire growth process. Kamal has shown that by carefully controlling the growth parameters such as hydrogen/silane ratios, and growth pressures and filament temperature, one can get nanocrystalline films with large grains (40 nm), much larger than usually possible with just the plasma deposition. Larger grain sizes, in general, should lead to better electronic properties such as mobility, lifetime and diffusion lengths. Kamal is spending a summer as an intern at Cypress Semiconductors in Minnesota.
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