Puneet Sharma
Puneet Sharma is a 2001 B.E. graduate from Panjab University, India. He obtained his M.S. in 2003 and Ph.D. in 2005 from Iowa State. His thesis dealt with investigating the effect of charged impurities on instability in amorphous Si (a-Si:H). He showed that charged impurities in a-Si:H had a different energy distribution from the neutral dangling bonds, and that the kinetics of instability also followed a different model . He related the charged impurities to the presence of oxygen in a-Si:H films. His Ph.D. research focuses on understanding the physics of nanocrystalline Si photovoltaic devices. He grows the devices using a VHF plasma deposition technique, and then systematically measures properties like diffusion lengths, deep level defects, and doping. Puneet spent a semester as an intern at Micron Technology in Idaho, working on 50 nm MOSFET devices.
Back to Current Graduate Students