Vishwas Jaju
Vishwas Jaju is a 2003 B.Tech. graduate from Indian Institute of Technology, Kanpur. He is working towards his Ph.D. with Professor Dalal. Viswas is developing novel, plasma deposited fluorinated silicon dioxide for use in stable, low defect density MOSFET devices. Vishwas set up a quasi-static capacitance system for detecting oxide interface charges, and he is systematically measuring interface charges and oxide stability in MOS devices made with these novel oxides.
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