The MBE system is used in support of the PBG effort to grow material for highfrequency electronic devices to be used in current PBG crystals and to develop new fabrication schemes for yet higher frequency PBGs. Also, MBE material is grown as part of a collaboration with Ekmel Ozbay (former MRC scientist) at Bilkent University, Turkey. The system is set up to grow Sb and Nbased semiconductors. Structures for longwavelength surfacenormal GaSb/AlSb optoelectronic devices have been grown and tested. An optimized process for growth of(Ga,In) N has been developed. Growth of specialized A1N structures for thin film resonators is under way, which includes investigation of unusual whisker growth for AlN that occurs under certain conditions.
Faculty
Gary Tuttle
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