Facilities and Equipment:
The MRC has a sizable equipment base, with capabilities ranging from epitaxial growth to materials characterization to device fabrication. Following is a partial list of MRC equipment:
- Lithography
- CAD system with multiple data formats
- Contact mask aligners
- 3- and 4-inch wafer capability
- 1,000 ft2 Class 100 clean room
- Raith e-beam lithography
- Karl Suss MJB 6 Mask Aligner
- Diffusion furnaces (3-inch and 4-inch wafer capability)
- Metallization
- Thermal Evaporation System
- Clean Room
- Sample preperation
- Dielectric films
- Reactive ion etching
- Dual chamber reactive ion etch (RIE) system with F and Cl etching capability
- Single chamber Deep RIE for Si MEMS etching
- Surface and thin film analysis
- MBE laboratory
- 1 Perkin Elmer MBE systems, Sb and As sources, and ECR plasmasource for nitrogen
- vacuum evaporator for metal deposition
- wet processing for the above
- Optical laboratory
- Photoluminescence
- Reflectance/transmission measurements for optoelectronic switches
- Quantum efficiency measurement system
- Ocean Optics uv/vis Reflection Measurement
- Ocean Optics uv/vis Integrated Sphere
- Varian/Cary Spectrophotometer
- Chemical sensor testing laboratory
- Gas blending system
- Network analyzers
- Student fabrication facilities
- Diffusion furnaces with solid dopant sources for 3inch wafers
- Photoresist spinner and bake ovens
- Mask aligner for low resolution lithography
- Karl Suss MJB3 mask aligner with deep UV optics for high resolution lithography
- 6 hearth electron beam evaporator
- HP 4145B semiconductor parameter analyzer
- HP 4280A C meter / C V plotter
- Hall coefficient measurement system
- Filmmetrics film thickness measurement system
- Device and circuit testing
- Device and circuit packaging
- Bonders
- Scribe and break system
- Plasma Deposition Laboratory
- 1 VHF (80 MHz)-plasma CVD reactor for depositing microcrystalline Si materials and devices
- In-situ growth characterization systems, including Langmuir probes, in-line quadrapole mass-spectrometer and Optical Emission Spectroscopy
- Electronic Material and Device Characterization Laboratory
- Multi-frequency, multi-temperature C(V) instruments (Agilent 4263, QuadTech, HP 4275) for characterizing amorphous and crystalline materials, oxides/insulators and MOS devices
- High sensitivity, low noise, multi-temperature Hall set up, capable of measuring nanocrystalline materials
- DLTS system
- Quantum efficiency vs. voltage spectroscopy for measuring deep defects and diffusion lengths
- Photo and dark conductivity apparatus
- Activation energy set up
- Environmental stability chamber for lifetime testing of materials and devices
- High frequency oscilloscopes and probes
- High resolution, multi-frequency, Renishaw Raman apparatus ( shared with MSE, in Howe Hall)
- Green laser Raman Spectrometer
- Material Characterization Equipment elsewhere on campus that is accessible to MRC faculty, staff and students:x-ray diffraction: SEM,TEM, EDS, XPS, Auger, AFM, Surface profilometer
- Organic Electronics Laboratory
- MBraun 4-section dual glovebox with built-in thermal evaporators and spin coaters.
- MBraun 2-section dual glovebox with I-V, dark I-V measurements, C-V and C-F measurements.
- Potentiostat/galvanostat for electrochemistry and AC characterization of devices.
- Environmental Chamber
- Temperature measurement chamber for organic devices.
- Solar cell Testing
- ABET solar simulator
- ORIEL solar simulator
- ELH lamp for J-V measurement
- Photoconductivity measurement
- Environmental testing
- Accelerated light testing for solar cells
- Solar simulator with neutral density filter
- Princeton Applied Research Parstatmeter
- Sinton lifetime measurement
