The reactive ion etching (RIE) system is a plasma etching tool that produces high-quality lithography of micro and nanostructures. During RIE etching, high energy ions generated by low-pressure plasma interact with the sample’s surface removing the volatile compounds. The RIE etching rate is tuned by several parameters, including the RF power generating the plasma, chamber pressure, and the flow rate of used gas.
Capabilities and specifications:
- Working Gas: CF4, SF6, O2, Ar
Contact: Dr. Qingfeng Xing or Dr. Liang Dong